Reverse Schottky gate current in AlGaN-GaN high-electron-mobility-transistors
نویسندگان
چکیده
منابع مشابه
Passivated AlGaN / GaN High Electron Mobility Transistors
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2012
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.4764866